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Lam Research Component 660-270643-205

Short Description:

The Lam Research 660-270643-205 is a high-purity edge ring specially designed for Lam Research advanced plasma etching systems.


  • FOB Price: US $0.5 - 9,999 / Piece
  • Min.Order Quantity: 100 Piece/Pieces
  • Supply Ability: 10000 Piece/Pieces per Month
  • Brand: Lam Research
  • Manager: Jinny
  • E-mail: sales5@xrjdcs.com
  • Tel: + 86-18250705533
  • ( WhatsApp )Wechat: + 86-18250705533
  • Warranty: one year
  • In stock: In stock
  • Product Detail

    Product Tags

    Lam Research 660-270643-205

    Product Overview

    The Lam Research 660-270643-205 is a high-purity edge ring specially designed for Lam Research advanced plasma etching systems. Serving as a critical consumable component in process chambers, it is engineered to optimize plasma distribution at the wafer edge. Typically mounted peripherally around the Electrostatic Chuck (ESC) and aligned flush with the wafer during processing, this component delivers three core functions: extending the plasma sheath to compensate for electric field distortion at the wafer edge, confining the reaction zone to prevent plasma leakage into non-process chamber areas, and protecting the ESC edge from high-energy ion bombardment and chemical corrosion.
    Its precision design directly determines the consistency of etching rate, profile angle, and Critical Dimension (CD) in wafer edge regions, making it a core hardware component for expanding effective wafer utilization area and improving overall production yield.

    Product Parameters

    Parameter Name
    Parameter Value
    Product Model
    660-270643-205
    Manufacturer
    Lam Research
    Product Type
    Edge Ring / Focus Ring (Process Chamber Consumable Component)
    Material
    High-purity silicon (monocrystalline/polycrystalline) or high-purity Silicon Carbide (SiC), application-dependent
    Applicable Processes
    Plasma etching (dielectric etching, conductor etching, metal etching)
    Applicable Equipment
    Lam Research 2300 Series, Kiyo Series and other 300mm etching platforms
    Dimension Specification
    Compatible with 300mm (12-inch) wafer processing chambers
    Surface Treatment
    Precision grinding, polishing, or customized surface roughness treatment
    Purity Requirement
    ≥ 99.999% (for silicon materials)
    Operating Temperature
    Withstands typical etching process temperatures (determined by cooling gas settings)
    Electrical Function
    Serves as part of the RF circuit, regulating edge sheath voltage
    Service Life
    Dependent on process RF hours, typically ranging from 500 to 2000 RF hours

    Structure and Composition

    The Lam Research 660-270643-205 features a structural design that integrates plasma physics and precision mechanical engineering. Visually, it is an annular thin plate with standardized width and thickness, with ultra-high precision in cross-sectional geometric features, including inner chamfers, outer steps, and positioning grooves. These subtle structural features are optimized through complex electric field simulation calculations, designed to form a smooth transitional electric field gradient at the wafer edge. This compensates for plasma density drop caused by geometric discontinuities, effectively eliminating process defects such as excessive edge etching rate (edge fast-etch effect) and profile chamfering.
    Structurally, this component is a solid single-material structure, with its performance highly reliant on the intrinsic material properties (dielectric constant, resistivity, thermal conductivity) and machining accuracy. During installation, it fits precisely onto the step structure at the ESC edge and is fixed by gravity or a specialized snap ring. This design enables convenient replacement operations while ensuring reliable thermal contact with the ESC and focus ring during processing. It facilitates heat dissipation via the backside helium cooling system, preventing thermal stress and structural cracking of the edge ring.

    Key Features and Advantages

    1. Optimized Wafer Edge Yield

    The core value of the Lam Research 660-270643-205 lies in eliminating etching inhomogeneity caused by plasma sheath distortion at wafer edges. Its precision geometric design guides consistent ion incidence angle and plasma flux across the entire wafer surface (including the 3mm edge zone), ensuring CD uniformity meets stringent process window requirements and significantly improving effective wafer utilization rate.

    2. Superior Corrosion Resistance and Extended Service Life

    Adopting high-performance materials such as high-purity silicon and silicon carbide, the edge ring delivers excellent resistance to plasma sputtering and chemical corrosion. In particular, SiC material features high hardness and outstanding thermal conductivity, which greatly reduces surface roughening and material loss induced by ion bombardment. This extends Preventive Maintenance (PM) cycles and effectively lowers equipment operational costs.

    3. Flexible Material Matching for Diverse Processes

    The Lam Research 660-270643-205 provides customized material solutions for different etching chemical environments. Silicon-based edge rings act as sacrificial protective layers in fluorine-based dielectric etching (e.g., oxide etching), while SiC edge rings serve as the optimal choice for chlorine-based and bromine-based etching (e.g., metal and polysilicon etching) due to their ultra-low corrosion rate. This high adaptability ensures reliable performance in various rigorous etching processes.

    Application Fields

    The Lam Research 660-270643-205 is primarily applied in front-end etching processes for advanced semiconductor manufacturing, serving as a mainstream critical consumable for 300mm (12-inch) wafer production lines. Its application scenarios cover core etching procedures in logic and memory chip production.
    For logic chips, it is widely used in gate etching, spacer etching, and contact hole etching processes. For memory chips, it plays a decisive role in maintaining sidewall verticality of stacked structures, especially for capacitor etching in DRAM and high-aspect-ratio (HAR) channel hole etching in 3D NAND Flash.
    In mass production, this component is compatible with high-density plasma (HDP) etching equipment. Process engineers formulate PM plans based on its cumulative RF operating hours and surface wear status. Replacement is required when excessive edge ring wear causes particle defects or electrical parameter deviations at wafer edges. As a standard Process Kit component, it is indispensable for chamber matching and stable High-Volume Manufacturing (HVM).

    Related Products

    • Lam Research 660-270643-204: Previous generation of this model with minor differences in chamfer angle and thickness. It matches specific legacy hardware platforms and is not fully interchangeable with the 205 version.
    • Lam Research 660-270643-206: Upgraded successor model adopting advanced coating technology (e.g., Yttrium Oxide coating) to further enhance corrosion resistance and service life.
    • Lam Research 660-270643-xxx: Series edge rings for 200mm (8-inch) wafer platforms with reduced overall dimensions, compatible with legacy production line equipment.
    • Lam Research 810-253279-204: Upper electrode showerhead, paired with the edge ring to form the core plasma confinement and distribution system.
    • Lam Research 811-000231-xxx: Electrostatic Chuck (ESC), the mounting base for the edge ring. The fitting gap between the ESC surface and edge ring directly affects process uniformity, requiring coordinated maintenance.

    Installation and Maintenance

    Pre-installation Preparation

    Before installing the Lam Research 660-270643-205, ensure the equipment is fully shut down, depressurized, and sufficiently cooled. Operators must wear cleanroom suits and gloves and perform all operations in a Class 100 clean environment. Thoroughly clean the ESC edge mounting surface with lint-free cloths and Isopropyl Alcohol (IPA), then purge with high-purity nitrogen. Avoid direct hand contact with the new edge ring surface; hold the edge via a dedicated vacuum pen or clean gloves. Place the edge ring gently into the ESC positioning groove to ensure flat and level placement without tilting or warping, then install the pressure ring or snap ring (if applicable).

    Maintenance Guidelines

    As a process consumable, the service life of the Lam Research 660-270643-205 is determined by cumulative process RF hours and particle monitoring results. After each chamber dry clean, inspect the component for thickness loss and surface conditions using professional thickness gauges and microscopes, focusing on cracks, notches, and severe discoloration. Replace the edge ring immediately if thickness loss reaches the preset replacement threshold or irreversible surface deposits are observed. Recording wear data during each replacement helps optimize PM cycle scheduling and spare parts inventory management.

    Product Warranty & Support

    All supplied Lam Research 660-270643-205 products are genuine high-quality components that fully comply with official specifications. We provide a six-month warranty valid from the date of product delivery. Backed by a complete supply chain and professional technical support system, we offer responsive spare parts supply, technical consultation, and after-sales services. Recognizing the critical role of this component in production yield assurance, we conduct strict visual inspection and dimensional verification for all products before delivery, striving to deliver reliable and long-term cooperative support for customer production operations.

     

     Lam Research 660-270643-205 (1)

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    • Sales Manager : Jinny
    • Email : sales5@xrjdcs.com
    • Whatsapp/Mobile:+86 18250705533

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