Lam Research 571-065780-XXXXXX Probe Module

Short Description:

The Lam Research 571-065780 is a high-precision RF voltage/current detection probe module specially designed for high-density plasma etching processes.

FOB Price: US $0.5 - 9,999 / Piece

Min.Order Quantity: 100 Piece/Pieces

Supply Ability: 10000 Piece/Pieces per Month

Brand: Lam Research

Manager: Jinny

E-mail: sales5@xrjdcs.com

Tel: + 86-18250705533

( WhatsApp )Wechat: + 86-18250705533

Warranty: one year

In stock: In stock

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Product Detail

Product Tags

Lam Research 571-065780-XXXXXX

Product Overview

The Lam Research 571-065780 is a high-precision RF voltage/current detection probe module specially designed for high-density plasma etching processes. It serves as a terminal execution component for precision detection and feedback links in the RF transmission system of Lam Research semiconductor manufacturing equipment. The core function of this component is to collect vector parameters in real time and with high fidelity on the RF energy transmission path, including the voltage amplitude, current amplitude, and phase difference between incident and reflected waves. Through its internal high-precision signal conditioning circuit, it converts these analog signals into standardized outputs directly usable by the controller.

In etching processes, the accurate impedance vector data provided by this module forms the foundation for fast and precise tuning of the RF matching network. Its detection accuracy directly determines the matching speed and the minimum level of reflected power.

Product Specifications

Parameter Name	Parameter Value
Product Model	571-065780
Manufacturer	Lam Research
Product Type	RF VI Probe (RF Voltage/Current Detection Probe)
Applicable Frequency Range	2 MHz / 13.56 MHz / 27 MHz / 60 MHz (multi-band compatible)
Maximum Withstand Power	5000 W (Continuous Wave Mode)
Voltage Detection Range	10 V to 5000 V (Peak-to-Peak)
Current Detection Range	0.5 A to 100 A (RMS)
Phase Detection Accuracy	±0.1° (Typical)
Amplitude Detection Accuracy	±1% of Reading (Typical)
Output Signal Type	Differential Analog Signal (Voltage/Current/Phase) or Digital Signal
Impedance Characteristics	50 Ω (Input/Output Coaxial Characteristic Impedance)
Connector Type	Input: 7/16 DIN Female / Output: 7/16 DIN Male (Straight-through)
Operating Temperature Range	10°C to 50°C (Non-Condensing)
Physical Dimensions	Approx. 150mm × 80mm × 80mm (Excluding protruding coaxial interfaces)
Installation Method	Series installation in the middle of RF transmission line (Flange fixing or bracket support)

Structure and Composition

The internal structure of the Lam Research 571-065780 embodies the core design philosophy of precision RF measurement technology. Its housing is precision-cast from high-permeability metal alloy materials, providing robust physical protection and forming an effective electromagnetic shielding layer. This prevents external stray electromagnetic fields from interfering with weak detection signals.

The entire module adopts a coaxial straight-through structure layout, with the input and output ends on the same axis. This minimizes discontinuity impacts on the RF transmission path and keeps the increment of Voltage Standing Wave Ratio (VSWR) at an extremely low level.

Inside the module, the main RF transmission line runs through the center, serving as a common reference path for voltage and current sensing. For voltage detection, a precision high-voltage capacitive voltage divider structure is adopted. Its high-voltage arm is composed of ceramic capacitors with special dielectric materials, featuring an ultra-low temperature coefficient and excellent RF frequency response. It can accurately collect RF voltage signals on the transmission line without introducing significant phase shift.

For current detection, a through-core current transformer structure is used to acquire RF current signals through magnetic core coupling, delivering wide bandwidth and high saturation current capability. The weak signals collected by the two sensing elements are amplified by a built-in high-performance low-noise preamplifier, then processed by temperature-compensated signal conditioning circuits, and finally output in differential analog signal format.

The module integrates a self-test circuit to verify the integrity of the sensing channel via external commands, ensuring the credibility of detection data. A built-in temperature sensor monitors the module’s operating temperature to further correct detection accuracy errors caused by temperature drift.

Key Features and Advantages

1. Excellent Detection Accuracy and Wide Dynamic Range

Equipped with high-precision sensing elements and precision calibration technology, the Lam Research 571-065780 maintains outstanding amplitude detection accuracy and phase linearity over a wide power range from tens of watts to several kilowatts. Its voltage and current detection accuracy are both better than ±1%, and the phase detection accuracy reaches an exceptional level of ±0.1°.

This high-level detection accuracy enables the back-end matching network to obtain vector information that truly reflects the cavity impedance state, thereby executing precise tuning decisions, minimizing reflected power, and establishing a solid data foundation for process stability and repeatability.

2. Wide Band Compatibility and Low Insertion Loss

The probe is designed to support multiple RF frequencies commonly used in semiconductor etching processes, including 2MHz, 13.56MHz, 27MHz, and 60MHz, enabling flexible deployment on equipment with different process configurations. Meanwhile, the optimized coaxial straight-through structure and impedance matching design of the 571-065780 ensure extremely low insertion loss and controllable phase deviation on the RF transmission path, with no substantial impact on efficient RF power transmission.

It realizes high-precision detection without significantly changing the system’s impedance characteristics, guaranteeing the overall efficiency of the RF system.

3. High Reliability and Environmental Adaptability

Tailored for semiconductor cleanroom environments with potential strong electromagnetic interference and temperature fluctuations, the module adopts strict design and manufacturing specifications. Key internal sensing elements undergo aging screening and temperature compensation pairing, ensuring stable detection parameters within the operating temperature range of 10°C to 50°C.

The robust all-metal sealed structure delivers excellent electromagnetic compatibility and effectively prevents erosion of internal electronic components by residual chemical gases in cleanrooms. It supports long-term reliable operation in harsh industrial environments and significantly reduces process abnormality risks caused by sensing element drift or failure.

Application Fields

The Lam Research 571-065780 is widely used in dielectric etching and conductor etching processes in front-end semiconductor manufacturing, serving as a standard detection component in the RF transmission links of Lam Research 2300-series and Exelan-series etching equipment. Installed between the RF power supply output and the matching network input, or between the matching network output and the reaction cavity, it monitors the entire RF energy transmission process.

In logic chip manufacturing, it supports RF feedback control for critical processes such as gate etching, contact hole etching, and metal hard mask trenching. In memory chip manufacturing, it meets the real-time RF parameter monitoring requirements for high-precision processes including 3D NAND deep hole etching and DRAM capacitor etching.

This component solves two core challenges in advanced etching processes. First, it ensures real-time closed-loop control. By providing high-speed and high-precision voltage, current, and phase data, it enables the matching network to respond rapidly to transient plasma state changes, maintaining reflected power at an extremely low level, protecting RF power supplies, and improving energy utilization efficiency.

Second, it provides diagnostic support for process development. The high-fidelity waveform data output by the 571-065780 helps process engineers deeply analyze the variation rules and mechanisms of plasma impedance during new process R&D. It serves as an indispensable measurement basis for optimizing process recipes and developing innovative processes such as pulse etching, shortening process development cycles and accelerating mass production adoption of advanced process nodes.