Lam Research 810-107813-004, 810-064624-400 Flow Controller

Short Description:

FOB Price: US $0.5 - 9,999 / Piece

Min.Order Quantity: 100 Piece/Pieces

Supply Ability: 10000 Piece/Pieces per Month

Brand: Lam Research

Manager: Jinny

E-mail: sales5@xrjdcs.com

Tel: + 86-18250705533

( WhatsApp )Wechat: + 86-18250705533

Warranty: one year

In stock: In stock

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Product Detail

Product Tags

Lam Research 810-107813-004, 810-064624-400

Product Overview

The Lam Research 810-107813-004 is an ultra-high-purity digital Mass Flow Controller (MFC) integrated module specifically designed for the front-end process gas delivery system of semiconductor plasma etching and deposition equipment. As a key model in the Lam Research 810-107813 product family, it serves as the core metering and execution component of Lam Research Gas Panel. Its core function is to deliver trace amounts of special process gas to the reaction chamber with ultra-high precision and ultra-fast response speed.

Distinct from standard industrial-grade MFCs, this model features an ultra-clean electrolytically polished internal flow channel. Its sensing element adopts an advanced thermal or pressure-based frictionless suspension design, integrated with precision laminar flow elements and adiabatic coils. This structure enables accurate gas mass flow measurement that is immune to inlet temperature and pressure fluctuations. In high-aspect-ratio etching for 3D NAND and atomic-level etching processes for advanced logic chips, the flow control stability of this component directly determines the chemical reaction rate on wafer surfaces, etching selectivity, and critical dimension (CD) uniformity.

As a critical connection node between the gas supply source and the reaction chamber, this component ensures stable delivery of process gas into the plasma environment at preset ratios, maximizing wafer within-wafer uniformity (WIWU) and batch-to-batch repeatability. It is applicable to process commissioning of new equipment and acts as a key replacement part for factory preventive maintenance (PM). For semiconductor manufacturers, it provides solid technical support for advancing advanced process nodes and improving wafer yield.

Product Specifications

Parameter Name	Parameter Value
Product Model	Lam Research 810-107813-004
Manufacturer	Lam Research
Product Type	Ultra-high-purity Digital Mass Flow Controller (MFC) Module
Typical Flow Range	10 SCCM ~ 50 SLM (subject to specific spool configuration)
Control Accuracy	±0.5% of setpoint (10% ~ 100% of full scale)
Repeatability	±0.2% of full scale
Response Time (Setpoint)	< 800 ms (within ±2% of final value)
Applicable Gas Types	Corrosive gases (Cl₂, BCl₃, HBr, CF₄, NF₃, etc.) and inert gases
Valve Body Material	Corrosion-resistant stainless steel (316L VAR or Hastelloy C-22)
Sealing Material	All-metal (metal gasket) or high-durability FFKM
Maximum Inlet Pressure	150 psig (approx. 10.3 bar)
Pressure Drop Range	10 ~ 60 psid (subject to specific setpoint)
Internal Leak Rate	< 1.0 × 10⁻⁹ atm·cc/sec (He)
External Leak Rate	< 1.0 × 10⁻¹⁰ atm·cc/sec (He)
Operating Temperature Range	15°C to 50°C (valve body can be heated to 120°C to prevent condensation)
Communication Protocol	DeviceNet™ or RS-485 (digital communication, supporting remote setting and diagnosis)
Cleanliness Grade	Class 1 assembly environment, double-layer vacuum sealed packaging
Power Supply Voltage	24 VDC ± 10%

Structure and Composition

The Lam Research 810-107813-004 integrates high-precision microfluidic manufacturing technology and high-reliability intelligent control technology. Physically, the module consists of three core functional areas: flow and sensing area, control valve actuation area, and signal processing and communication area.

The flow and sensing area is the core gas circuit of the module, mainly composed of an ultra-precision machined special alloy metal block. It contains a bypass capillary for mainstream gas shunting and a spiral or straight sensing tube. Heating coils and temperature-sensing elements are wrapped around the exterior of the sensing tube, forming a classic thermal mass flow sensing core. When gas flows through the sensing tube, it carries away heat. The temperature difference signal between the upstream and downstream is amplified by a Wheatstone bridge circuit, enabling accurate conversion of real-time gas mass flow rate.

The control valve actuation area is the physical execution mechanism, located at the downstream outlet of the gas flow channel. It integrates a high-dynamic-response electromagnetic proportional regulating valve with a specially designed spool. This design resists chemical wear in corrosive gas environments and maintains an extremely low deadband.

Serving as the intelligent core of the 810-107813-004, the signal processing and communication area includes a multi-layer high-density Printed Circuit Board (PCB). The PCB is equipped with a high-speed Microcontroller Unit (MCU), high-precision ADC/DAC converters, and isolated communication interface chips. The MCU collects real-time flow sensing signals, calculates output values via built-in PID (Proportional-Integral-Derivative) control algorithms, and precisely drives the proportional solenoid valve to maintain the target flow. The entire PCB assembly is firmly encapsulated in a shield cover on the module upper cover, effectively resisting strong Radio Frequency (RF) electromagnetic field interference near the reaction chamber.

Key Features and Advantages

Ultra-high Precision and Excellent Long-term Stability

Adopting advanced thermal sensing technology and full-digital closed-loop control algorithms, the Lam Research 810-107813-004 delivers superior setpoint control accuracy beyond industrial standards across the full flow range. Its built-in zero-drift compensation technology effectively suppresses the impact of ambient temperature changes and gas component differences on flow rates. It minimizes flow output drift during continuous operation for weeks or even months, ensuring high repeatability of wafer process results.

Ultra-fast Response and Active Flow Compensation

Advanced pulsed plasma processes require synchronous pulsed flow matching RF power switching. This module features an ultra-short step response time (< 800 ms) to quickly follow recipe flow variations. More importantly, its embedded DSP real-timely monitors inlet pressure fluctuations and actively drives valve pre-compensation. This completely eliminates downstream flow interference caused by upstream gas pressure instability, significantly improving transient process stability.

Corrosion Resistance Design and Ultimate Cleanliness Assurance

Tailored for strongly corrosive and toxic gases commonly used in semiconductor processes, the module adopts a high-nickel alloy valve body and all-metal or special FFKM sealing solution. The internal flow channel undergoes Electrolytic Polishing (EP) to achieve an ultra-low surface roughness. This prevents gas molecule adsorption and particle retention on the channel inner wall, enabling rapid gas replacement and extremely low cross-contamination risk. It fully meets the ultra-high cleanliness requirements for core gas circuit components in the semiconductor industry.

Application Fields

The Lam Research 810-107813-004 is mainly integrated into advanced 200mm and 300mm wafer manufacturing equipment, acting as a core flow control component in the Gas Box of Lam Research 2300 series (Kiyo series dielectric etchers, Flex series conductor etchers) and Versys series metal etchers.

Its typical applications cover key etching steps in logic chip manufacturing, including CF₄/CHF₃ mixed gas control for Shallow Trench Isolation (STI) etching, precise Cl₂/HBr ratio control for polysilicon gate etching, and complex gas switching for low-k dielectric etching in Back-End-of-Line (BEOL) Damascus processes. In the memory chip sector, it is widely used for stepped precursor gas flow control in ultra-high-aspect-ratio channel hole etching for 3D NAND flash memory.

In broader semiconductor and emerging technology fields, the module is applicable to deep silicon etching (Bosch process with alternating C₄F₈ and SF₆ control) for MEMS devices and high-temperature etching processes for power devices (IGBT, SiC, etc.). It solves core process challenges in wafer fabrication, including etching rate drift, aggravated micro-loading effect, and particle pollution caused by flow overshoot. As a key diagnostic component for fab engineers in new process commissioning and low-yield troubleshooting, this spare part is indispensable in etching and deposition process modules of global wafer fabs.

Installation and Maintenance

Pre-installation Preparation

Before installing the Lam Research 810-107813-004, completely cut off the upstream gas supply of the Gas Box and purge residual process gas in the pipeline with nitrogen to a safe concentration. Operators must wear cleanroom-specific dust-free garments and nitrile gloves and perform operations in a Class 100 or higher clean environment.

Purge the interface slightly with high-purity nitrogen before installation and inspect the integrity of the protective film on the new module flow port. Fasten VCR or Swagelok joints strictly in accordance with Lam factory-specified cross sequence and torque values; thread seal tape and sealant are prohibited. For electrical connection, confirm correct polarity of 24V power supply and verify that communication terminal resistor settings match the system network topology (e.g., terminal settings for DeviceNet network).

Maintenance Recommendations

Incorporate the 810-107813-004 into the regular equipment PM cycle. Regularly check the zero drift and full-scale calibration status of the module via the equipment self-diagnosis interface. Sustained extremely low or high valve opening percentages for setpoint flow maintenance indicate potential upstream filter blockage or spool aging, requiring timely replacement.

Monitor the tracking error (dynamic follow deviation) between actual flow and setpoint via the HMI during daily inspections. Perform Auto-Zero calibration if persistent large deviations occur. Replace the upstream purification filter (e.g., 830-101012-001) simultaneously during module replacement, and release pipeline stress to avoid reduced air tightness caused by additional mechanical stress on the module.