Lam Research 810-234640-311 Allocation Terminal

Short Description:

The Lam Research 810-234640-311 is an ultra-high purity showerhead component exclusively designed for the upper electrode system of the reaction chamber in semiconductor plasma etching equipment.

FOB Price: US $0.5 - 9,999 / Piece

Min.Order Quantity: 100 Piece/Pieces

Supply Ability: 10000 Piece/Pieces per Month

Brand: Lam Research

Manager: Jinny

E-mail: sales5@xrjdcs.com

Tel: + 86-18250705533

( WhatsApp )Wechat: + 86-18250705533

Warranty: one year

In stock: In stock

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Lam Research 810-234640-311

Product Overview

The Lam Research 810-234640-311 is an ultra-high purity showerhead component exclusively designed for the upper electrode system of the reaction chamber in semiconductor plasma etching equipment. Serving as the final distribution terminal for process gases entering the reaction zone of Lam Research etchers, this component delivers multiple process gases including CF₄, CHF₃, Cl₂, HBr, and NF₃ from the gas panel to the wafer surface with extremely uniform flow velocity and spatial distribution.

Far from a simple perforated plate, the 810-234640-311 is a critical functional part manufactured through precise hydrodynamic calculation, ultra-precision mechanical processing, and specialized surface treatment processes. It features thousands of microholes arranged in a specific geometric pattern. The aperture size, depth, taper, and distribution density of these microholes are strictly designed and verified to achieve extreme gas distribution uniformity across the reaction chamber cross-section, meeting the stringent requirements of atomic-level semiconductor processes.

In high-aspect-ratio etching for 3D NAND devices and FinFET gate etching for advanced logic chips, the gas outlet uniformity of this component directly determines the consistency of chemical reaction rate, etching selectivity, and global critical dimension (CD) uniformity on the wafer surface.

This model belongs to the customized process kit system for specific Lam Research chamber models and is a consumable spare part replaced based on RF Hours or process cycle counts. Fabricated from high-purity, high-thermal-conductivity special alloys (nickel-based alloys or stainless steel), the 810-234640-311 undergoes specialized anodization or Y₂O₃ coating treatment on its surface, delivering excellent plasma erosion resistance and an extremely low particle shedding rate.

Product Parameters

Parameter Item	Specification Value
Product Model	Lam Research 810-234640-311
Manufacturer	Lam Research
Product Type	Reaction Chamber Showerhead / Gas Distribution Plate (GDP)
Base Material	High-purity nickel-based alloy (e.g., Inconel) or high-purity 316L VAR stainless steel (selected per process requirements)
Surface Coating	Anodized coating or high-purity Yttrium Oxide (Y₂O₃) plasma spray coating
Microhole Quantity	Thousands to tens of thousands, arranged in a customized geometric pattern (subject to specific design)
Microhole Diameter	Sub-millimeter level (typical 0.2 ~ 0.8 mm, precisely calibrated per gas flow requirements)
Microhole Machining Tolerance	± 2 μm, minimizing flow deviation across all holes
Surface Roughness (Plasma Side)	Ra < 0.4 μm, specially polished to reduce particle adhesion
Flatness	< 25 μm (full diameter range) to ensure tight sealing with upper electrode backing plate
Operating Temperature Range	Room temperature to 350°C, adapting to high-temperature chamber baking environments
Compatible Gas Environment	Fluorine/chlorine/bromine-based plasma (CF₄, NF₃, Cl₂, HBr, BCl₃, etc.)
Installation Method	Fixed to upper electrode backing plate via positioning pins and circumferential bolts
Packaging Cleanliness Class	Class 1, double-layer vacuum sealed packaging
Typical Service Life	Approximately 5,000 ~ 15,000 RF Hours, or replaced based on real-time particle monitoring data (varies with process conditions)
Matching Components	Upper electrode backing plate, gas distribution chamber seals (O-ring / C-seal)

Structure and Composition

The Lam Research 810-234640-311 integrates precision fluid dynamics, material science, and ultra-high-precision machining technologies in its structural design. Shaped as a thin disc, its overall diameter, thickness, edge chamfer, and other dimensional parameters are precisely tailored to fit the upper electrode installation space of designated reaction chamber models.

Thousands of micro through-holes are distributed on the disc in customized radial density and concentric circular layouts. These microholes adopt a precision variable-cross-section structure instead of straight holes: the inlet end is enlarged to facilitate gas intake, while the plasma-side outlet is smaller with a specific taper. This structural design optimizes gas jet velocity distribution and directionality, enabling gas molecules to reach the wafer surface uniformly at a nearly vertical angle.

In terms of material structure, the component uses high-purity corrosion-resistant alloy as the substrate to withstand chemical erosion from highly corrosive fluorine-based and chlorine-based plasma. The plasma-facing lower surface is covered with a dense Y₂O₃ coating or anodized film. This coating significantly enhances corrosion resistance and effectively suppresses metal particle sputtering and shedding caused by ion bombardment, preventing wafer metal contamination.

The component is fixed to the upper electrode backing plate through precision positioning pins and multiple circumferentially arranged mounting bolt holes on its backside. A sealed gas plenum is formed between the backing plate and the showerhead, enabling sufficient pressure equalization and preliminary gas pre-distribution before process gases uniformly enter the reaction chamber through the microholes.

Key Features and Advantages

1. Ultimate Gas Distribution Uniformity

Equipped with thousands of precisely machined microholes with highly consistent flow characteristics, the Lam Research 810-234640-311 delivers atomic-level uniform gas distribution across the entire wafer diameter. The highly homogeneous gas field ensures in-wafer consistency of plasma density and reactive species concentration, minimizing etching rate deviation from wafer center to edge. It serves as the core guarantee for superior global critical dimension uniformity (CDU) of wafers.

2. Excellent Erosion Resistance and Ultra-Low Particle Generation

Combining high-purity nickel-based alloy or special stainless steel substrate with high-quality Y₂O₃ plasma-resistant coating, the showerhead achieves outstanding chemical corrosion resistance and physical sputtering resistance, greatly extending component service life. Meanwhile, the high-density and low-friction coating structure reduces micro-particle shedding risks induced by ion bombardment and thermal stress. It maintains ultra-clean chamber environments and effectively lowers wafer defect density for stable mass production.

3. Precision Manufacturing Ensures Process Repeatability

Each 810-234640-311 undergoes strict dimensional inspection and airflow characteristic verification before delivery, with microhole aperture consistency deviation controlled within the micron level. The high-precision manufacturing standard enables each replacement part to fully replicate factory-calibrated gas flow field characteristics after installation. Equipment engineers can avoid time-consuming process matching after PM replacement, significantly shortening post-maintenance process recovery time and ensuring continuous mass production rhythm.

Application Fields

The Lam Research 810-234640-311 is mainly integrated into advanced 200mm and 300mm wafer etching equipment, acting as a core component of the upper electrode gas distribution system for Lam Research 2300 series (Kiyo series dielectric etchers, Flex series conductor etchers) and Versys series metal etchers.

Its application scenarios cover anisotropic dielectric etching (silicon oxide and silicon nitride spacer etching), precise polysilicon gate profile definition, and low-k dielectric etching in BEOL metal interconnection for logic chip manufacturing. In memory chip production, it is widely applied in high-aspect-ratio (HAR) channel hole etching for 3D NAND flash and deep trench etching for DRAM capacitors, ensuring consistent topography of high-aspect-ratio structures across the full wafer via optimized initial gas distribution.

Beyond mainstream semiconductor manufacturing, this component is also applicable to MEMS and advanced packaging processes, including TSV etching and deep reactive-ion etching (DRIE). It effectively solves core process challenges such as center-to-edge etching rate variation, aggravated microloading effects, and sudden particle defect surge caused by aging showerhead coatings. As a key spare part for regular chamber maintenance (CM) and new process window evaluation in fabs, it is indispensable for stabilizing the baseline of etching processes in advanced wafer fabs worldwide.

Installation and Maintenance

Pre-Installation Preparation

Before installing the Lam Research 810-234640-311, confirm the reaction chamber has returned to atmospheric pressure, cooled down to room temperature (or factory-specified safe opening temperature), and been fully purged with nitrogen to eliminate residual toxic and harmful gases. Operators must wear full cleanroom protective equipment (cleanroom suit, face mask, nitrile gloves) and perform operations in a Class 1 microenvironment.

When handling the new component, hold its edge and backside with clean gloves; direct contact with the plasma-facing microhole surface and sealing surface is strictly prohibited. Clean the positioning surface and sealing groove of the upper electrode backing plate with lint-free cloth dampened with electronic-grade isopropanol, then blow dry with high-purity nitrogen.

Place the 810-234640-311 horizontally and slowly in place per positioning marks. Use a calibrated torque wrench to tighten mounting bolts symmetrically and progressively to factory-specified torque values, ensuring uniform stress distribution and avoiding component warpage.

Maintenance Recommendations

As a periodic consumable part, the replacement cycle of the component shall be determined strictly by process-specified RF Hours or regular wafer particle defect monitoring data. It is recommended to replace the matching O-ring/C-seal synchronously during each showerhead replacement to guarantee sealing reliability.

Inspect the used component for surface discoloration, coating peeling, and microhole blockage near the microhole area during removal. These anomalies indicate aggressive process conditions or abnormal chamber discharge, which shall be recorded and evaluated for process parameter optimization. Waste components must be recycled in accordance with fab regulations for toxic and heavy metal-containing waste.

After installation, conduct chamber bake-out treatment and at least one dummy wafer etching cycle for surface seasoning. Mass production wafer processing can only be resumed after core process parameters (etching rate, particle count) stabilize.