Lam Research 853-064940-010 Cable Assembly

Short Description:

The Lam Research 853-064940-010 is an ultra-high-precision Radio Frequency (RF) coaxial cable assembly engineered for high-density plasma etching and deposition equipment.

FOB Price: US $0.5 - 9,999 / Piece

Min.Order Quantity: 100 Piece/Pieces

Supply Ability: 10000 Piece/Pieces per Month

Brand: Lam Research

Manager: Jinny

E-mail: sales5@xrjdcs.com

Tel: + 86-18250705533

( WhatsApp )Wechat: + 86-18250705533

Warranty: one year

In stock: In stock

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Lam Research 853-064940-010

Product Overview

The Lam Research 853-064940-010 is an ultra-high-precision Radio Frequency (RF) coaxial cable assembly engineered for high-density plasma etching and deposition equipment. As a critical signal interconnection component in Lam Research’s semiconductor manufacturing platform, it is designed to deliver high-frequency electrical energy generated by RF generators to the plasma load of process chambers with ultra-low loss and maximum signal fidelity.

Classified as a customized spare part for Lam Research manufacturing systems, this model fully complies with stringent semiconductor industry requirements for cleanliness, corrosion resistance, and vacuum compatibility. It features a high-performance solid or semi-rigid conductor structure, low-dielectric-constant insulating medium, and plasma-corrosion-resistant high-reliability connectors. These structural designs ensure superior thermal stability and mechanical durability under continuous high-power RF stress.

As a core segment of the RF transmission chain, the assembly effectively suppresses Voltage Standing Wave Ratio (VSWR) and minimizes signal reflection, protecting high-value RF generators and stabilizing process consistency. It is applicable to both new equipment initial installation and preventive maintenance replacement, providing solid support for semiconductor manufacturers to improve wafer yield and Overall Equipment Effectiveness (OEE).

Product Specifications

Parameter Item	Specification Value
Product Model	Lam Research 853-064940-010
Manufacturer	Lam Research
Product Type	RF Coaxial Cable Assembly / RF Jumper
Characteristic Impedance	50 Ohms (Nominal)
Operating Frequency Range	DC to 60 GHz (Typical design, compatible with mainstream 13.56/27.12 MHz and VHF bands)
Insertion Loss	< 0.5 dB (Typical value, subject to specific length and frequency point)
VSWR	< 1.25:1 (Full operating frequency band)
Connector Type	High-performance Type N or precision 7/16 DIN male/female connectors (actual product configuration prevails, compatible with Lam Research terminals)
Conductor Material	Silver-plated solid copper or silver-plated copper-clad steel (center conductor)
Insulation Material	Low-loss expanded Polytetrafluoroethylene (ePTFE) or solid PTFE
Outer Conductor / Shielding Layer	Double-layer silver-plated copper braid plus aluminum foil, or semi-rigid copper tube
Outer Jacket Material	Plasma and corrosion-resistant FEP/ETFE fluoroplastic
Maximum RF Power	> 5 kW Continuous Wave (CW)
Operating Temperature Range	-55°C to +150°C (High-reliability grade)
Typical Physical Length	Customized phase-matched length according to equipment wiring design (0.5-2 meters in general)

Structure and Composition

The internal structure and material selection of the Lam Research 853-064940-010 fully meet semiconductor-grade high-reliability standards. Its core structure consists of three functional layers:

The innermost layer is a high-conductivity silver-plated copper center conductor. Its diameter is precisely calculated to ensure optimal power transmission capacity under a 50-ohm impedance system, serving as the core channel for RF current conduction.

The middle layer is an ultra-low-loss dielectric insulation layer, mostly made of high-purity expanded Polytetrafluoroethylene (ePTFE). Its uniform physical structure minimizes dielectric loss during RF energy transmission and maintains stable dielectric constant under varying operating conditions.

The outermost layer adopts a multi-layer shielding structure combining silver-plated copper braided mesh and aluminum foil polyester film, achieving near-perfect Electromagnetic Interference (EMI) shielding performance. This design prevents internal RF signal leakage from interfering with other sensitive equipment circuits and blocks external noise coupling into the RF transmission link.

Both ends of the assembly are equipped with high-precision custom connectors exclusively designed by Lam Research, rather than standard commercial parts. The connector housing is made of stainless steel or copper alloy with silver or gold plating, delivering excellent plasma corrosion resistance and electrical conductivity. The internal insulation support and contact interface design maintain consistent impedance and ultra-low contact resistance after multiple plugging cycles and temperature fluctuations.

Crucially, every 853-064940-010 cable assembly undergoes strict Vector Network Analyzer (VNA) testing before delivery. This ensures consistent electrical length and phase response across all units, which is vital for multi-cathode reaction chamber systems to achieve preset electric field distribution and superposition effects of multi-channel RF power.

Key Features and Advantages

1. Ultra-high Power Transmission with Minimal Loss

Combining low-loss PTFE-based insulation and silver-plated conductors, the 853-064940-010 transmits high-power RF energy from generators to process chambers with ultra-low attenuation. It effectively boosts plasma density and accelerates process rates, while reducing cable self-heating. This avoids electrical parameter drift caused by thermal expansion and ensures long-term stable operation of semiconductor processes.

2. Extreme Phase Stability and Consistency

In advanced multi-frequency and multi-cathode etching processes, RF signal phase correlation directly governs plasma uniformity and etching profile verticality. Each 853-064940-010 assembly undergoes 100% phase matching testing during production, retaining identical electrical delay characteristics as original factory parts.

Equipment engineers do not need to recalibrate complex matching networks after cable replacement, significantly reducing equipment downtime. Meanwhile, it guarantees critical dimension (CD) consistency across wafer batches, stabilizing mass production quality.

3. Superior Environmental Resistance and Long Service Life

Semiconductor process chambers feature corrosive fluorine-based and chlorine-based gases, as well as continuous vacuum thermal cycling. The cable’s FEP/ETFE fluoroplastic outer jacket provides exceptional chemical and plasma corrosion resistance. Its reinforced connector locking structure and kink-resistant design prevent mechanical damage during routine chamber maintenance.

The durable structural design extends Preventive Maintenance (PM) cycles, reduces frequent part replacement, and effectively cuts factory spare part operation costs.

Application Fields

The Lam Research 853-064940-010 is a core RF transmission component for advanced semiconductor wafer manufacturing equipment, widely deployed on Lam Research dielectric etchers (2300-series Kiyo and Flex series) and conductor etching systems.

Typical application scenarios include high-aspect-ratio contact etching and gate etching for FinFET and GAA logic devices, as well as deep trench etching and hard mask etching for 3D NAND and DRAM memory chips. In these processes, the assembly efficiently feeds RF energy into reaction chambers to dissociate process gases and form high-density plasma, enabling anisotropic precision etching on wafer surfaces.

Beyond wafer etching, this cable assembly is also applicable to precision RF energy-controlled deposition processes, including Plasma-Enhanced Chemical Vapor Deposition (PECVD) and High-Density Plasma Chemical Vapor Deposition (HDP-CVD) systems. It solves core manufacturing pain points such as poor process uniformity, increased particle contamination, and equipment self-protection shutdowns caused by excessive RF reflected power and unstable signal transmission.

Indispensable for 8-inch and 12-inch wafer fabs worldwide, this spare part is classified as a Class-A critical component to sustain yield stability and continuous production of advanced process nodes.