Lam Research 810-802902-038 810-800256-207 Component Module

Short Description:

The Lam Research 810-802902-038 is a highly integrated core module of RF Match Network Component exclusively designed for semiconductor plasma etching and deposition equipment.

FOB Price: US $0.5 - 9,999 / Piece

Min.Order Quantity: 100 Piece/Pieces

Supply Ability: 10000 Piece/Pieces per Month

Brand: Lam Research

Manager: Jinny

E-mail: sales5@xrjdcs.com

Tel: + 86-18250705533

( WhatsApp )Wechat: + 86-18250705533

Warranty: one year

In stock: In stock

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Product Detail

Product Tags

Lam Research 810-802902-038 810-800256-207

Product Overview

The Lam Research 810-802902-038 is a highly integrated core module of RF Match Network Component exclusively designed for semiconductor plasma etching and deposition equipment. Serving as a critical adaptive bridge between the RF generator and the plasma load of the reaction chamber in Lam Research etching tools, this component dynamically adjusts the internal capacitor or inductor matrix to achieve precise conjugate matching between the output impedance of the RF generator and the continuously varying plasma impedance inside the chamber.

As the final control gateway for energy input into the reaction chamber, the component effectively compensates for impedance drift caused by polymer deposition, chamber aging, or wafer load fluctuations, ensuring superior repeatability of process recipes over tens of thousands of RF cycles. It is widely applicable for initial calibration during new equipment installation and acts as a key replacement part for yield improvement in Fab facility Preventive Maintenance (PM). This product provides a solid hardware foundation for semiconductor manufacturers to advance cutting-edge process nodes.

Product Specifications

Parameter Name	Parameter Value
Product Model	Lam Research 810-802902-038
Manufacturer	Lam Research
Product Type	Core Component of RF Impedance Matching Network (Matching Capacitor/Sensor Module)
Applicable Frequency Range	2 MHz / 13.56 MHz / 27.12 MHz / 60 MHz (Broadband Compatibility)
Maximum RF Power Rating	＞10 kW (Continuous Wave, Forced Air/Water Cooling Condition)
Variable Capacitance Range	50 – 1000 pF (Typical Main Matching Capacitor, Vacuum Variable Type)
Capacitance Adjustment Resolution	＜0.1 pF (Corresponding to Stepper Motor Subdivision Drive)
Maximum Operating Voltage	＞5 kV (Peak Value)
RF Current Sensing Accuracy	±1% Full Scale (Built-in Current Transformer)
RF Voltage Sensing Accuracy	±1% Full Scale (Built-in High-Voltage Divider Resistor/Capacitor)
Response Time (Matching Time)	＜100 ms (Typical Full-Range Search and Lock Time)
Operating Temperature Range	25°C to 85°C (Internal Ambient Temperature of Matching Cabinet)
Communication Interface	Parallel Digital I/O or RS-485/Fiber Optic (Connecting to Main Control ECU)
Cooling Method	Forced Air Cooling + Aluminum Heat Sink Substrate Conduction Cooling
Installation Method	Horizontal Mounting on Sliding Rails or Fixed Brackets of Matching Network Cabinet

Structure and Composition

The internal structure of the Lam Research 810-802902-038 integrates advanced RF power electronics and precision mechanical engineering technologies. Encapsulated in an electromagnetically shielded aluminum alloy housing, the module consists of three core internal units: the execution unit, the sensing unit, and the control interface unit.

As the core functional part of the module, the execution unit is equipped with one or two sets of vacuum variable capacitors. These capacitors adopt precision-machined ceramic vacuum tubes as dielectrics, with internal electrodes made of oxygen-free copper or beryllium copper alloy, and are connected to external stepper motors through bellows structures. The stepper motor driver receives pulse commands from the host system and drives the rotor assembly of the capacitors to perform micro rotational or linear displacement via high-reduction-ratio gear or belt transmission mechanisms, enabling continuous and precise adjustment of capacitance values.

The sensing unit serves as the perceptual foundation for the closed-loop operation of the 810-802902-038 and is connected in series with the RF transmission line. It integrates high-permeability toroidal magnetic cores for current induction and temperature-compensated high-voltage voltage divider networks for voltage induction. These sensors acquire the amplitude and phase information of RF signals at a high bandwidth of tens of megahertz.

The control interface unit undertakes high-speed Analog-to-Digital Conversion (ADC) of analog signals collected by sensors and conducts data interaction with the host system after logical processing. The module substrate adopts high-frequency ceramic composite materials (e.g., Rogers 4350B) to ensure low dielectric loss and excellent high-voltage insulation performance under high-frequency and high-voltage conditions. All internal RF traces follow strict 50-ohm impedance control and adopt silver-plated large-area ground planes, effectively eliminating electromagnetic interference (EMI) to internal sensors and other weak-current signals of the equipment.

Key Features and Advantages

Ultra-Fast and High-Precision Automatic Matching Capability

Equipped with high-speed responsive stepper motors and optimized matching search algorithms, the Lam Research 810-802902-038 locates the optimal matching point of plasma loads within milliseconds. This rapid response is critical for next-generation etching technologies featuring frequent recipe switching and pulsed processes. It significantly suppresses transient process instability caused by excessive reflected power and effectively improves wafer edge etching uniformity (UCI).

Ultra-High Q Factor and Ultra-Low Loss

Featuring high-grade vacuum variable capacitors and large-cross-section silver-plated conductor structures, the component delivers an extremely high quality factor (Q factor) under high RF power operation. This minimizes thermal loss during RF power transmission, protecting high-cost RF generators and preventing parameter drift of the matching network induced by self-heating. The design maximizes energy transmission efficiency from the RF generator to the chamber plasma load.

Superior Environmental Adaptability and Durability

Semiconductor reaction chambers typically operate in harsh environments with high temperatures, strong electromagnetic fields, and chemical corrosion. The module adopts a fully sealed high-strength aluminum alloy housing, with internal electronic components treated with vacuum potting and three-proof coating to resist moisture and harmful gas intrusion. The vacuum capacitor’s long-lifespan and arc-resistant design enables the module to achieve a Mean Time Between Failures (MTBF) far exceeding industry standards, greatly reducing unplanned downtime risks of Fab facilities caused by matching network failures.

Application Fields

The Lam Research 810-802902-038 is primarily integrated into advanced 300mm wafer etching equipment, functioning as a core matching component for the RF transmission systems of Lam Research 2300 series (including Kiyo series dielectric etchers and Flex series conductor etchers) and Versys series metal etchers. Its typical applications cover anisotropic dielectric etching and metal hard mask opening in logic chip manufacturing, as well as ultra-high aspect ratio (HAR) contact hole etching and capacitor deep trench etching in memory chip production.

In these processes, the component dynamically matches fluctuating plasma impedance, ensuring stable RF power injection into the chamber with minimal reflection and enabling precise control of reactive ion energy and flux on wafer surfaces. It is also widely applied in compound semiconductors and emerging technologies, including deep trench etching for power devices (e.g., GaN-on-SiC) and Silicon Deep Reactive Ion Etching (DRIE) for MEMS (Micro-Electro-Mechanical Systems).

The 810-802902-038 effectively solves core process pain points in wafer manufacturing, such as process rate drift, aggravated micro-loading effects, and equipment self-protection shutdowns triggered by excessive reflected power. As a preferred component for performance evaluation and preventive replacement of matching networks by Fab maintenance engineers, it plays an indispensable role in etching process modules of advanced wafer fabs worldwide.

Related Products

Lam Research 810-802902-037: The previous-generation model with slightly lower parameters, featuring different capacitance adjustment ranges and response speeds, suitable for low-power and old-version etching chambers.

Lam Research 810-802902-039: An enhanced version of the same series, integrated with higher-precision RF voltage/current sensors and supporting advanced RF harmonic detection functions.

Lam Research 810-800256-207: A supporting RF power supply or RF distribution unit that forms a complete RF energy transmission link together with the 810-802902-038 module.

Lam Research 778-900032-001: A dedicated stepper motor drive board for the matching module, installed on the backplane of the matching cabinet to receive control signals and drive the internal capacitance adjustment motor.

Lam Research 778-900056-002: An RF filter module installed in series in the same RF link to filter harmonic interference generated during processing.

Lam Research 810-312817-001: A low-loss RF coaxial cable connecting the matching module to the reaction chamber feed terminal, serving as the physical power transmission channel for the module.

Installation and Maintenance

Pre-Installation Preparation

Before installing the Lam Research 810-802902-038, ensure the main RF generator is completely powered off and fully discharged, and cut off and lock out/tag out (LOTO) the total power of the RF matching network cabinet. Operators must wear ESD anti-static wristbands and clean the sliding rails and connector interfaces inside the cabinet with clean dust-free cloths.

During installation, smoothly insert the module into the backplane slot of the cabinet, ensuring full contact between the bottom heat sink substrate and the cabinet heat dissipation backplane (apply thermal grease if necessary). Fasten the screws in the sequence of fixing both ends first to ensure ground continuity, then tightening the middle screws. When connecting the RF coaxial cable to the module output terminal, use a dedicated torque wrench to guarantee full insertion of inner conductor shrapnel without bending or offset.

Maintenance Guidelines

It is recommended to include the 810-802902-038 in the quarterly routine equipment maintenance plan. During maintenance, use a thermal imager to scan the module surface for abnormal hotspots, which may indicate increased dielectric loss of capacitors. In the equipment self-diagnosis mode, observe the capacitance position feedback of the module under no-load and process load conditions. Significant offset or frequent loss of lock compared with new equipment indicates possible wear and excessive clearance in the mechanical transmission structure of capacitors, which requires timely inspection.

Daily inspections should cover the operating status of cabinet cooling fans and the patency of air ducts. Clean the module surface with low-pressure compressed air blowing only. Liquid cleaning agents are prohibited to avoid penetration into high-voltage electronic component areas and cause equipment damage.