Lam Research 853-189925-141 Power Supply Electrode Assembly

Short Description:

The Lam Research 853-189925-141 is an integrated Upper Electrode Assembly, commonly referred to as a Gas Showerhead, designed exclusively for Lam Research’s advanced plasma etching systems.

FOB Price: US $0.5 - 9,999 / Piece

Min.Order Quantity: 100 Piece/Pieces

Supply Ability: 10000 Piece/Pieces per Month

Brand: Lam Research

Manager: Jinny

E-mail: sales5@xrjdcs.com

Tel: + 86-18250705533

( WhatsApp )Wechat: + 86-18250705533

Warranty: one year

In stock: In stock

Send email to us Download as PDF

Product Detail

Product Tags

Lam Research 853-189925-141

Product Overview

The Lam Research 853-189925-141 is an integrated Upper Electrode Assembly, commonly referred to as a Gas Showerhead, designed exclusively for Lam Research’s advanced plasma etching systems. Mounted on the top of the process chamber, it serves as a core executive component for RF energy transmission and process gas distribution, undertaking a pivotal role in wafer etching and deposition processes.

This component features three core functions. First, it uniformly injects process gases (including etchants and passivators) into the reaction zone through densely arranged micro-pores on its surface. Second, acting as an RF electrode, it efficiently couples RF energy into process gases to generate stable and uniform plasma. Third, its lower surface is directly exposed to the plasma environment, protecting the top chamber structure from ion bombardment and chemical corrosion.

The performance of this upper electrode assembly directly determines the wafer etching rate, surface uniformity, and critical dimension (CD) control accuracy. Fabricated from high-purity, high-conductivity, and high-thermal-conductivity specialized materials such as monocrystalline silicon or polycrystalline silicon, the component is manufactured via precision mechanical machining and professional surface treatment processes.

Product Specifications

Parameter Name	Parameter Value
Product Model	853-189925-141
Manufacturer	Lam Research
Product Type	Upper Electrode / Gas Showerhead Assembly (Core Process Chamber Component)
Material	High-purity monocrystalline silicon / polycrystalline silicon, or aluminum substrate with high-purity SiC coating
Applicable Processes	Plasma etching (dielectric etching, conductor etching) and partial CVD processes
Applicable Equipment	Lam Research 2300 Series, Kiyo Series and other 300mm etching platforms
Micro-pore Layout	Dense micro-pore array (thousands of micro-pores) with hydrodynamic optimization
Surface Treatment	Precision grinding, polishing, or anti-corrosion coating (e.g., Y₂O₃ spraying)
Purity Requirement	≥ 99.999% (for silicon-based electrodes)
RF Coupling Mode	Capacitive Coupled Plasma (CCP) or Inductively Coupled Plasma (ICP), subject to equipment configuration
Cooling Method	Built-in water-cooling or air-cooling channels, compatible with backside helium cooling system
Installation Method	Fixed to the chamber top via bolts or pressure rings
Operating Temperature	20°C to 250°C process temperature tolerance
Service Life	Determined by process RF hours, typically 1000-3000 RF hours

Structure and Composition

The Lam Research 853-189925-141 embodies high-precision engineering and advanced material science. Physically, it consists of two core functional areas: the plasma-facing electrode faceplate, and the rear gas plenum and mounting base.

The faceplate is perforated with thousands of micron-scale holes optimized via rigorous hydrodynamic simulation. The aperture size, depth, inclination angle, and spacing distribution of these holes are precisely designed to achieve molecular-level uniform distribution of process gases across the entire wafer surface. The rear gas plenum adopts a labyrinth flow channel and buffer structure, which evenly distributes gas from a single inlet to the entire back surface of the faceplate, ensuring stable flow rate and pressure for every micro-pore.

The component integrates professional temperature control structures. During operation, the upper electrode endures high-energy ion bombardment and continuous RF heating, making temperature field uniformity critical to process stability. Precision cooling liquid circulation channels or helium cooling grooves are embedded inside the backing plate. Connected to the equipment’s temperature control system, these structures accurately stabilize the faceplate temperature through circulating coolant or backside helium pressure, preventing faceplate deformation and process drift caused by uneven thermal expansion.

In addition, high-precision positioning pins and mounting holes enable accurate mechanical and electrical connection with the RF feed rod and chamber top, ensuring uniform RF energy coupling to the faceplate.

Key Features and Advantages

1. Outstanding Process Uniformity

The core advantage of the 853-189925-141 lies in its extreme uniformity of gas distribution and RF coupling. Through original precision fluid simulation and micro-pore machining technology, the component minimizes the molecular density deviation of reaction gases on the wafer surface. Meanwhile, the uniform resistivity of the electrode material ensures a smooth radial distribution of plasma density above the wafer. This dual uniformity enables the within-wafer critical dimension (CD) uniformity to meet advanced process standards (below 3%), supporting high-precision chip manufacturing.

2. High-Purity Material and Ultra-Low Contamination

Fabricated from ultra-high-purity silicon materials, the upper electrode greatly reduces metal contamination risks caused by electrode sputtering and corrosion. Advanced logic and memory chip manufacturing impose extremely strict controls on metal ions such as Fe, Cu, and Ni. The high-purity silicon structure effectively avoids gate oxide breakdown and increased device leakage induced by metal pollutants, fundamentally improving wafer yield and product reliability.

3. Long Service Life and Easy Maintenance

Adopting a modular integrated or combined design, the component supports quick and convenient replacement operations. Its plasma-corrosion-resistant high-purity faceplate significantly extends the preventive maintenance (PM) cycle and reduces equipment downtime. The replaceable faceplate design enables reusable core components such as backing plates, effectively lowering long-term spare part procurement costs for manufacturers.

Application Fields

The Lam Research 853-189925-141 is mainly applied in the front-end etching process of advanced semiconductor manufacturing, serving as an indispensable core consumable for 300mm wafer production lines. Its application scenarios cover multiple key etching processes for logic and memory chips.

For logic chips, it supports gate etch, shallow trench isolation (STI) etch, spacer etch, and contact/via etch processes. For memory chips, it plays a decisive role in DRAM capacitor structure etching and high-aspect-ratio (HAR) channel hole etching for 3D NAND Flash, which is a highly challenging advanced process.

In harsh working environments with continuous high-density plasma (HDP) bombardment and corrosion from fluorine-based and chlorine-based gases, the component maintains stable performance. Process engineers formulate accurate preventive maintenance plans by monitoring the cumulative RF hours of the component and CD measurement data. For wafer foundries and memory chip manufacturers, high-quality original upper electrodes are the foundation of stable yield for advanced process research and high-volume manufacturing (HVM).

Installation and Maintenance

Pre-Installation Preparation

Installation of the Lam Research 853-189925-141 is a high-precision cleanroom operation. All operations must be performed after the equipment is fully shut down, the chamber is purged with nitrogen to atmospheric pressure, and the system cools down to room temperature. Operators must wear complete cleanroom suits, gloves, and goggles.

Before installation, clean the sealing surface of the chamber top mounting base and the contact surface of the RF feed rod thoroughly with lint-free cloths and isopropyl alcohol (IPA). The precision and brittle faceplate must be handled with special lifting jigs or by steadily holding the edges; contact with the micro-pore area is strictly prohibited. Align the positioning pins for slow placement, and fasten the mounting bolts strictly in accordance with the original factory-specified torque sequence and torque values (N·m).

Maintenance Guidelines

As a consumable component, its service life is determined by cumulative process RF hours. After each chamber dry clean, maintenance engineers shall inspect the faceplate surface with professional thickness gauges and microscopes. Key inspection items include micro-pore enlargement/blockage caused by plasma bombardment, abnormal discoloration, cracks, and particle adhesion.

Replace the component immediately if excessive thickness loss or irreparable surface damage is detected. For split-type structures, inspect the helium sealing ring between the backing plate and faceplate during replacement, and replace aging rings synchronously to avoid helium leakage and temperature control accuracy deviation.

Product Warranty & Support

All supplied Lam Research 853-189925-141 products are high-quality and traceable genuine parts. We provide a six-month warranty period from the date of product delivery.

Fully aware of the direct impact of this core component on wafer yield, we implement strict appearance inspection and dimensional sampling tests for all incoming goods. Our professional technical team and comprehensive after-sales service system provide full-cycle technical support, including model selection consultation, installation guidance, and fault troubleshooting, to ensure stable and efficient operation of customer production lines.

————————————————————————————————————-

If you would like to learn more about our products and services, please feel free to contact us at any time!